产品
W632GU8NB
The W632GU8NB is a 2G bits DDR3L SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.
| Density | 2Gb | Status | Mass Production |
| Vcc | 1.283V to 1.45V | Frequency | 667 / 800 / 933 / 1066 MHz |
| Package | VFBGA 96 | Tempture Range | C-temp, I-temp, Automotive |
| Feature List | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V Backward compatible to VDD, VDDQ=1.5V ± 0.075 V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architechure CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On-The-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data Edge-aligned with read data and center-aligned with write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CK and CK#) Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate) Posted CAS with programmable additive latency (AL = 0, CL -1 and CL -2) for improved command, address and data bus efficiency Read Latency = Additive Latency plus CAS Latency (RL = AL + CL) Auto-precharge operation for read and write bursts Refresh, Self-Refresh, Auto Seif- refresh (ASR) and Partial array self refresh (PASR) Precharged Power Down ans Active Power Down Data masks (DM) for write data Programmable CAS Write Latency (CWL) per operating frequency Write Latency WL = AL + CWL Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence System level timing calibration support via write leveling and MPR read pattem ZQ Calibration for output driver and ODT using extermal reference resistor to ground Asynchronous RESET# pin for Power-up initialization sequence reset function Programmable on-die termination (ODT) for data, data mask and differential strobe pairs Dynamic ODT mode for improved signal integrity and preselectable termination impedances during writes 1K Byte page size |
||
华邦flash，2016年开始主营华邦存储芯片，还有更多flash分享《W25Q128JVSIQ》《W25Q256JVEIQ》。
