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HMN3006AD5规格书 华虹挚芯代理商 MOS管
来源：翊杰芯片代理商作者：小鑫发布时间：2021-03-30 10:53:19
HMN3006AD5规格书 华虹挚芯代理商 MOS管
HM Silicon N-Channel Power MOSFET
General Description：
The HMN3006AD5 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge and operation with gate voltage as low as 4.5V. It can be used in a wide variety of applications. The package form is PDFN5*6-8L, which accords with the RoHS standard and Halogen Free standard.
Features：
⚫ Fast Switching
⚫ Low Gate Charge and RDS(on)
⚫ Low Reverse transfer capacitances
Applications：
⚫ DC-DC converter
⚫ Portable Equipment
⚫ Power management
Package Marking and Ordering Information
| Device Marking | Device | Device Package | Quantity |
| N3006AD5 | HMN3006AD5 | PDFN5*6-8L | 5000 units |
Absolute Maximum Ratings（TA= 25℃ unless otherwise specified）
| Symbol | Parameter | Rating | Units | |
| VDSS | Drain-to-Source Voltage | 30 | V | |
| ID | Continuous Drain Current TC = 25 °C | 45 | A | |
| Continuous Drain Current TC = 70 °C | 36 | A | ||
| IDMa1 | Pulsed Drain Current | 180 | A | |
| VGS | Gate-to-Source Voltage | ±20 | V | |
| PD | Power Dissipation | 50 | W | |
| EASa2 | Single pulse avalanche energy | 100 | mJ | |
| TJ，Tstg | Operating Junction and Storage Temperature Range | 150，–55 to 150 | ℃ | |
| TL | Maximum Temperature for Soldering | 300 | ℃ |
更详细的 HMN3006AD5 规格书，请找我们的客服咨询，更多精彩华虹挚芯MOS分享文章《华虹挚芯中低压MOS》《MOS场效应管》
