产品
W987D2HBJ
This is a 128Mb Low Power SDR SDRAM organized as 2M words x 4 banks x 16bits
| Density | 128Mb | Status | Mass Production |
| Vcc | 1.8V/1.8V | Frequency | 133 / 166 MHz |
| Package | 54VFBGA | Tempture Range | -25~85℃ / -40~85℃ |
| Feature List | Burst Type: Sequential or Interleave Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Programmable output buffer driver strength Four internal banks for concurrent operation Burst Length: 1、2、4 、8 and full page Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver |
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华邦flash，2016年开始主营华邦存储芯片，还有更多flash分享《W25Q128JVSIQ》《W25Q256JVEIQ》。
