产品
W966D6HBG
The is a 64M bit CellularRAMTM compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
| Density | 64Mb | Status | Not Recommend For New Design |
| Vcc | 1.8V/1.8V | Frequency | Max clock rate 133 MHz |
| Package | 54VFBGA | Tempture Range | Industrial -40℃~85℃ |
| Feature List | Supports asynchronous, page, and burst operations Random access time: 70ns Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz Low-power features: TCR, PAR, DPD Page mode READ access:Sixteen-word page size Interpage READ access: 70ns, Intrapage READ access: 20ns |
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华邦flash，2016年开始主营华邦存储芯片，还有更多flash分享《W25Q128JVSIQ》《W25Q256JVEIQ》。
