华邦闪存Serial NOR Flash系列64M位串行闪存，具有统一的4KB扇区以及双/四倍SPI和QPI；体积小— 由于串行flash采用比并行flash更少的连线在一个系统中传送数据，所以缩小的系统板的空间，能常采用SOIC8、DFN、BGA等封装；低功耗 — 串行SPI FLASH器件采用串行接口进行连续数据存取，所以可以达到工作电流：7mA 待机电流：8uA；工作温度范围宽 - 新的Q版本工作温度在-40 to +105；快速擦除烧录程式 —通过4KByte统一Sector-Erase,32Kbyte或者64Kbyte Block-Erase或者Chip- Erase能力，目前已达到数据擦除：18mS； 成本低，用途广 - 由于是台湾生产与加工，无形中降低了很多成本。广泛应用于数码类以及消费类电子产品中； 产品线长 - 串行SPI FLASH产品提供512Kb - 128Mb的密度、I2C、Microwire 和 SPI 兼容协议。
| 密度 | 64Mb | 状态 | Mass Production |
| Vcc | 2.7V - 3.6V | 频率 | 133MHz |
| 封装 | SOIC8 208mil, SOIC16 300mil, WSON6X5mm, WSON8 8X6mm |
温度范围 | _40℃ ~ 85℃ /_40℃ ~ 105℃ |
| 功能列表 | SPI/QPI/DTR (Double Transfer Rate) Read UID & OTP Feature Volatile & Non-Volatile SR Programmable Output Driver Strength Individual Block/Sector Write Protection |
|
华邦 Serial Flash系列规格参数
| Part No. | Density | Voltage | Temp Range | Max Freq | Package(s) |
| W25X05CL | 512Kb(64KB*8) | 2.3V-3.6V | -40°C to +85°C | 104MHz(208Mhz Dual-SPI) | SOIC8(150mil) TSSOP8(173mil) WSON8(6*5mm) USON8(2*3mm) |
| W25X10CL | 1Mb(128KB*8) | 2.3V-3.6V | -40°C to +85°C | 104MHz(208Mhz Dual-SPI) | SOIC8(150mil) TSSOP8(173mil) WSON8(6*5mm) USON8(2*3mm) |
| W25X10BVSSIG | 1Mb(128KB*8) | 2.7V-3.6V | -40°C to +85°C | 104MHz(208Mhz Dual-SPI) | SOIC8(150mil) WSON8(6*5mm) |
| W25X10BL | 1Mb(128KB*8) | 2.3V-3.6V | -40°C to +85°C | 50MHz(100Mhz Dual-SPI) | SOIC8(150mil) WSON8(6*5mm) |
| W25X20CL | 2Mb(256KB*8) | 2.3V-3.6V | -40°C to +85°C | 104MHz(208Mhz Dual-SPI) | SOIC8(150mil) TSSOP8(173mil) WSON8(6*5mm) USON8(2*3mm) |
| W25X20BVSSIG | 2Mb(256KB*8) | 2.7V-3.6V | -40°C to +85°C | 104MHz(208Mhz Dual-SPI) | SOIC-8(150mil) WSON8(6*5mm) |
| W25X20BL | 2Mb(256KB*8) | 2.3V-3.6V | -40°C to +85°C | 50MHz(100Mhz Dual-SPI) | SOIC8(150mil) WSON8(6*5mm) |
| W25X20BW | 2Mb(256KB*8) | 1.65V-1.95V | -40°C to +85°C | 80MHz(160/320Mhz Dual-SPI) | SOIC8(150mil) WSON8(6*5mm) |
| W25X40BVSSIG | 4Mb(512KB*8) | 2.7V-3.6V | -40°C to +85°C | 104MHz(208Mhz Dual-SPI) | SOIC8(150mil) SOIC8(208mil) WSON8(6*5mm) PDIP8(300mil) |
| W25X40BL | 4Mb(512KB*8) | 2.3V-3.6V | -40°C to +85°C | 50MHz(100Mhz Dual-SPI) | SOIC8(150mil) SOIC8(208mil) WSON8(6*5mm) PDIP8(300mil) |
| W25Q40BVSSIG | 4Mb(512KB*8) | 2.7V-3.6V | -40°C to +85°C | 80/104MHz(160/320Mhz Dual-SPI) | SOIC8(150mil) SOIC8(208mil) WSON8(6*5mm) PDIP8(300mil) |
| W25Q40BL | 4Mb(512KB*8) | 2.3V-3.6V | -40°C to +85°C | 50MHz(100/200Mhz Dual-SPI) | SOIC8(150mil) SOIC8(208mil) WSON8(6*5mm) PDIP8(300mil) |
| W25Q40BW | 4Mb(512KB*8) | 1.65V-1.95V | -40°C to +85°C | 80MHz(160/320Mhz Dual-SPI) | SOIC8(150mil) WSON8(6*5mm) |
| W25Q80BVSSIG | 8Mb(1MB*8) | 2.7V-3.6V | -40°C to +85°C | 80/104MHz(160/320Mhz Dual-SPI) | SOIC8(150mil) SOIC8(208mil) WSON8(6*5mm) PDIP8(300mil) |
| W25Q80BL | 8Mb(1MB*8) | 2.3V-3.6V | -40°C to +85°C | 50MHz(100/200Mhz Dual-SPI) | SOIC8(150mil) SOIC8(208mil) WSON8(6*5mm) PDIP8(300mil) |
| W25Q80BW | 8Mb(1MB*8) | 1.65V-1.95V | -40°C to +85°C | 80MHz(160/320Mhz Dual-SPI) | SOIC8(150mil) SOIC8(208mil) WSON8(6*5mm) |
| W25Q16BVSSIG | 16Mb(2MB*8) | 2.7V-3.6V | -40°C to +85°C | 80/104MHz(160/320Mhz Dual-SPI) | SOIC8(150mil) SOIC8(208mil) SOIC16(300mil) WSON8(6*5mm) PDIP8(300mil) |
| W25Q32BVSSIG | 32Mb(4MB*8) | 2.7V-3.6V | -40°C to +85°C | 104/80MHz(208/320Mhz Dual-SPI) | SOIC8(208mil) SOIC16(300mil) WSON8(6*5mm) WSON8(8*6mm) PDIP8(300mil) TFBGA24(6*8mm) |
| W25Q64DWSTIM | 64Mb(8MB*8) | 1.65V-1.95V | -40°C to +85°C | 50MHz(100/200Mhz Dual-SPI) | SOIC8(150mil) SOIC8(208mil) SOIC16(300mil)WSON8(6*5mm) PDIP8(300mil) |
| W25Q64FVDAIG | 64Mb(8MB*8) | 2.3V-3.6V | -40°C to +85°C | 104MHz(208/416Mhz Dual-SPI) | SOIC8(150mil) SOIC8(208mil) WSON8(6*5mm) PDIP8(300mil) TFBGA24(6*8mm) |
| W25Q64BVFIG | 64Mb(8MB*8) | 2.7V-3.6V | -40 to +85 -40 to +105 | 104/80MHz(208/320Mhz Dual-SPI) | SOIC8(208mil) SOIC16(300mil) WSON8(6*5mm) WSON8(8*6mm) PDIP8(300mil) TFBGA24(6*8mm) |
| W25Q64BVSSIG | 64Mb(8MB*8) | 2.7V-3.6V | -40°C to +85°C | 104MHz(208/416Mhz Dual-SPI) | SOIC8(208mil) SOIC16(300mil) WSON8(6*5mm) WSON8(8*6mm) TFBGA24(6*8mm) |
| W25Q64BVSSIG | 64Mb(8MB*8) | 2.7V-3.6V | -40°C to +85°C | 80MHz(160/320MhzDual/Quad-SPI) | SOIC8(208mil) SOIC16(300mil) WSON8(8*6mm) PDIP8(300mil) |
| W25Q64CVSSIG | 64Mb(8MB*8) | 2.7V-3.6V | -40 to +85 -40 to +105 | 80MHz(160/320MhzDual/Quad-SPI) | SOIC8(208mil) SOIC16(300mil) WSON8(6*5mm) PDIP8(300mil) TFBGA24(6*8mm) |
| W25Q128FVSSIG | 128Mb(16MB*8) | 2.7V-3.6V | -40°C to +85°C | 104MHz(208/416Mhz Dual-SPI) | SOIC8(208mil) SOIC16(300mil) WSON8(6*5mm) WSON8(8*6mm) TFBGA24(6*8mm) |
| W25Q128BVFG | 128Mb(16MB*8) | 2.7V-3.6V | -40 to +85 -40 to +105 | 104/70MHz(208/280Mhz Dual-SPI) | SOIC16(300mil) WSON8(8*6mm) TFBGA24(6*8mm) |
| W25Q256BVFG | 256Mb(32MB*8) | 2.7V-3.6V | -40°C to +85°C | 104/80MHz(208/320Mhz Dual-SPI) | SOIC16(300mil) WSON8(8*6mm) TFBGA24(6*8mm) |
为了因应不断攀升的快闪记忆体需求，华邦电于中科园区营运12吋晶圆厂外，亦计划于南科高雄园区建置第二座12吋晶圆厂，将视需求逐步扩增和调配产能，以期满足诸如AI、车用电子、储存装置、网络与5G等快闪记忆体新应用需求，华邦闪存，还有更多华邦flash芯片精彩文章分享《华邦W25Q128FVSIG旧版逐渐告退市场，替代的是升级版W25Q128JVSIQ》《华邦跃居全球 NOR Flash 内存供应龙头》
