产品
W63CH6MBV
This is a 4Gb Low Power DDR3 SDRAM organized as 32M words x 8 banks x 16bits
| Density | 4Gb | Status | Mass Production |
| Vcc | 1.8V/1.2V | Frequency | 800/933MHz |
| Package | 178BGA | Tempture Range | -25~85℃ / -40~85℃ |
| Feature List | 8 internal banks for concurrent operation Burst length: 8 Per Bank Refresh Partial Array Self-Refresh(PASR) On-die termination (ODT) Deep Power Down Mode (DPD Mode) Programmable Read and Write Latencies (RL/WL) Bidirectional differential data strobe |
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华邦flash，2016年开始主营华邦存储芯片，还有更多flash分享《W25Q128JVSIQ》《W25Q256JVEIQ》。
