产品
W949D6KBH
This is a 512MB Low Power SDR SDRAM organized as 4M words x 4 banks x 16bits
| Density | 512MB | Status | Not for new design |
| Vcc | 1.8V/1.8V | Frequency | 166 / 200 MHz |
| Package | 60VFBGA | Tempture Range | -25~85℃ / -40~85℃ |
| Feature List | Burst Type: Sequential or Interleave Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Programmable output buffer driver strength Four internal banks for concurrent operation Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver Note: K-Die keeps supporting but D-Die is suggested for the new design |
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华邦flash，2016年开始主营华邦存储芯片，还有更多flash分享《W25Q128JVSIQ》《W25Q256JVEIQ》。
